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Viser: Nanoscale Electronic Devices and Their Applications
Nanoscale Electronic Devices and Their Applications
Khurshed Ahmad Shah og Farooq Ahmad Khanday
(2020)
Sprog: Engelsk
Detaljer om varen
- Hardback: 256 sider
- Udgiver: Taylor & Francis Group (Juli 2020)
- Forfattere: Khurshed Ahmad Shah og Farooq Ahmad Khanday
- ISBN: 9780367407070
1. Fundamentals of Nanoscale Electronic Devices
1.
0 Introduction
1.
1 Free Electron theory and Quantum theory
1.
2 Origin of band gap in solids
1.
3 Tight binding approximation
1.
4 Low dimensional materials
1.
5 Quantum confinement in low dimensional materials
1.
6 Density of states in bulk materials
1.
7 Density of states in 2D, 1D and 0D materials
1.
8 Examples of 0D, 1D and 2D materials
1.
9 Non-Equilibrium green's Function (NEGF)
1.
10 Density Function Theory (DFT)
1.
11 Summary
1.
12 References
2. Carbon Nanotubes and their Device Applications
2.
0 Introduction
2.
1 Physical properties of Carbon nanotubes (CNTs)
2.
2 Ballistic transport and Quantum conductance in CNTs
2.
3 CNT two probe devices
2.
4 CNT Field Effect Transistors (CNT-FETs)
2.
5 CNT logic gates
2.
6 CNT sensors
2.
7 CNT photo-detectors and Photoresistors
2.
8 CNT Interconnects
2.
9 CNT memories
2.
10 Summary
2.
11 References
3. Electronic Transport Properties of Doped Carbon Nanotube Devices
3.
0 Introduction
3.
1 Doping methods and techniques
3.
2 Transport properties of two probe CNT devices
3.
3 Effects of doping on electronic transport properties of two probe CNT systems
3.
4 Negative Differential Resistance (NDR) in CNT-FET and CNT-MOSFET
3.
5 NDR in chromium doped single walled carbon nanotube devices
3.
6 Comparative study of conventional and electrical doping in CNT devices
3.
7 Transport properties of CNT bio-molecule sensors
3.
8 Summary
3.
9 References
4. Field Effect Transistors Based on Graphene and Other Popular Two Dimensional Materials
4.
0 Introduction
4.
1 Graphene Field Effect Transistors (GFETs)
4.
2 Molybdenum disulphide Field Effect Transistors (MoS2-FETs)
4.
3 Molybdenum Selenide Field Effect Transistors (MOSe2 -FETs)
4.
4 Tungsten disulphide Field Effect Transistors (WS2-FETs)
4.
5 Silicene Field and Germenene Effect Transistors
4.
6 Summary
4.
7 References
5. Gate and Channel Engineered Nanoscale Electronic Devices
5.
0. Introduction to Nanoscale devices
5.
1. Non-Conventional Solutions to Miniaturization Problems
5.
2. Gate and Channel Engineering Techniques
5.
3. Multi-gate Multi-material MOSFET
5.
4. Multi-gate Multi-material Tunnel FET
5.
5. Summary
5.
6. References
6. Spin Nanoscale Electronic Devices and their Applications
6.
0. Introduction to Spintronics
6.
1. Spin Devices
6.
2 Summary
6.
3 References
7. Phase Change Devices and their Applications
7.
0. Introduction
7.
1. Phase Change Memory (PCM)
7.
2. Memristor
7.
3. Resistive Random Access Memory (RRAM)
7.
5. Summary
7.
6. References